Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
نویسندگان
چکیده
This work presents a process design kit (PDK) for 0.15 μm GaAs pHEMT low-noise MMIC applications developed AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, transistors. The PDK can be used in technology transfer or education.
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ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics10222775